Spatially modulated tunnel magnetoresistance on the nanoscale.

نویسندگان

  • Hirofumi Oka
  • Kun Tao
  • Sebastian Wedekind
  • Guillemin Rodary
  • Valeri S Stepanyuk
  • Dirk Sander
  • Jürgen Kirschner
چکیده

We investigate the local tunnel magnetoresistance (TMR) effect within a single Co nanoisland using spin-polarized scanning tunneling microscopy. We observe a clear spatial modulation of the TMR ratio with an amplitude of ~20% and a spacing of ~1.3 nm between maxima and minima around the Fermi level. This result can be ascribed to a spatially modulated spin polarization within the Co island due to spin-dependent quantum interference. Our combined experimental and theoretical study reveals that spin-dependent electron confinement affects all transport properties such as differential conductance, conductance, and TMR. We demonstrate that the TMR within a nanostructured magnetic tunnel junction can be controlled on a length scale of 1 nm through spin-dependent quantum interference.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tunneling magnetoresistance in phase-separated manganite nanobridges

The manganite La,Pr,Ca MnO3 is well known for its micrometer-scale phase separation into coexisting ferromagnetic metallic FMM and insulating regions. Fabrication of bridges with widths smaller than the phase-separation length scale has allowed us to probe the magnetic properties of individual phase-separated regions. At the onset of phase separation, a magnetic field induced insulator-to-metal...

متن کامل

Spin diode based on Fe/MgO double tunnel junction.

We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...

متن کامل

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier

The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good...

متن کامل

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: Spin-orbit coupling in magnetic tunnel junctions

The effects of the spin-orbit coupling SOC on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance TAMR are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interfer...

متن کامل

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 107 18  شماره 

صفحات  -

تاریخ انتشار 2011